Monday 20 May 2013


QUANTUM ELECTRONICS ---     QUANTUM WELL INFRA RED PHOTODETECTORS


A quantum well infrared photo detector (QWIP) is an infrared photo detector made from semiconductor materials which contain one or more quantum wells. These can be integrated together with electronics and optics to make infrared cameras for thermography. A very common well material is gallium arsenide, used with barrier material aluminium gallium arsenide.


An elegant candidate for QWIP is the square quantum well of basic quantum mechanics.
When the quantum well is sufficiently deep and narrow, its energy states are quantized (discrete). The potential depth and width of the well can be adjusted so that it holds only two energy states: a ground state near the well bottom, and a first excited state near the well top. A photon striking the well will excite an electron in the ground state to the first excited state, and then an externally-applied voltage sweeps it out producing a photocurrent. Only photons having energies corresponding to the energy separation between the two states are absorbed, resulting in a detector with a sharp absorption spectrum.
Designing a quantum well to detect light of a particular wavelength becomes a simple matter of tailoring the potential depth and width of the well to produce two states separated by the desired photon energy. The GaAs/AlxGal -xAs material system allows the quantum well shape to be tweaked over a range wide enough to enable light detection at wavelengths longer than - 6 pm. Fabricated entirely from large bandgap materials which are easy to grow and process, it is now possible to obtain large uniform FPAs of QWIPs tuned to detect light at wavelengths from 6 to 25 pm in the GaAs/AlxGal-xAs material system.
 
Ziyad Alamri
Post #5


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